FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 10V, 80nC @ 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Manufacturer:
Alpha & Omega Semiconductor Inc.
Drain to Source Voltage (Vdss):
25V
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
880pF @ 12.5V, 3215pF @ 12.5V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN-EP (3.3x3.3)
Packaging:
Tape & Reel (TR)
Power - Max:
2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
AONE361
ECCN:
EAR99
