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This is manufactured by GE Aerospace. The manufacturer part number is GE12050EEA3. The FET features of the product include silicon carbide (sic). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 160ma. The product has -55°c ~ 150°c (tc) operating temperature range. Moreover, the product comes in module. It has a maximum Rds On and voltage of 4.4mohm @ 475a, 20v. The maximum gate charge and given voltages include 1248nc @ 18v. The product is rohs non-compliant. In addition, it is vendor undefined. The continuous current drain at 25°C is 475a (tc). The product is available in 6 n-channel (3-phase bridge) configuration. It is shipped in bulk package . The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is not applicable. The product's input capacitance at maximum includes 29300pf @ 600v. The product is available in chassis mount configuration. The product sic power, is a highly preferred choice for users. module is the supplier device package value. The maximum power of the product is 1250w (tc). This product use silicon carbide (sic) technology. Moreover, it corresponds to ge12050, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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