FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
9.3nC @ 10V, 49nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
555pF @ 15V, 2550pF @ 15V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PDFN (5x6)
Power - Max:
2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM5055
ECCN:
EAR99
