FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 10V, 17.5nC @ 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Manufacturer:
Alpha & Omega Semiconductor Inc.
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
485pF @ 15V, 807pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN-EP (3x3)
Packaging:
Bulk
Power - Max:
2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
AON793
ECCN:
EAR99
