Central Semiconductor Corp CTLDM8120-M832D TR

Central Semiconductor Corp

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
8-TDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
3.56nC @ 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 950mA, 4.5V
Current - Continuous Drain (Id) @ 25°C:
860mA (Ta)
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Input Capacitance (Ciss) (Max) @ Vds:
200pF @ 16V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TLM832D
Power - Max:
1.65W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CTLDM8120
ECCN:
EAR99
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is CTLDM8120-M832D TR. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-tdfn exposed pad. The maximum gate charge and given voltages include 3.56nc @ 10v. It has a maximum Rds On and voltage of 150mohm @ 950ma, 4.5v. The continuous current drain at 25°C is 860ma (ta). The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. The product's input capacitance at maximum includes 200pf @ 16v. The product is available in surface mount configuration. tlm832d is the supplier device package value. The maximum power of the product is 1.65w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ctldm8120, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 8/Feb/2021(PCN Obsolescence/ EOL)
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CTLDM8120-M832D(Datasheets)
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RoHS Cert(Environmental Information)

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FAQs

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