FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
4.8nC @ 4.5V, 7.8nC @ 4.5V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Configuration:
N and P-Channel Complementary
Manufacturer:
Panjit International Inc.
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
429pF @ 25V, 846pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN5060B-8
Packaging:
Tape & Reel (TR)
Power - Max:
1.7W (Ta), 21W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJQ5606
ECCN:
EAR99