Fairchild Semiconductor FDS6990S

FDS6990S Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
Vendor Undefined
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta)
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1233pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Power - Max:
900mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS6990
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDS6990S. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 22mohm @ 7.5a, 10v. The maximum gate charge and given voltages include 16nc @ 5v. The product is rohs3 compliant. In addition, it is vendor undefined. The continuous current drain at 25°C is 7.5a (ta). The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1233pf @ 15v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. The maximum power of the product is 900mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds6990, a base product number of the product. The product is designated with the ear99 code number.

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