FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Detailed Description:
Mosfet Array N and P-Channel 100V 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
TrenchFET®
Package / Case:
PowerPAK® 1212-8 Dual
Supplier Device Package:
PowerPAK® 1212-8 Dual
Manufacturer Standard Lead Time:
47 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Manufacturer:
Vishay Siliconix
