FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V, 33nC @ 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA, 2.2V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
7A (Ta), 5.7A (Ta)
Configuration:
N and P-Channel Complementary
Manufacturer:
Alpha & Omega Semiconductor Inc.
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 15V, 1100pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
1.7W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
AOSD213
ECCN:
EAR99
