FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.4V @ 250µA, 2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 10V, 98nC @ 10V
RoHS Status:
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C:
23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1050pF @ 10V, 4670pF @ 10V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
PowerPAIR®, TrenchFET®
Supplier Device Package:
8-PowerPair® (6x5)
Power - Max:
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZF914
ECCN:
EAR99
