FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V, 56nC @ 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA, 2.3V @ 250µA
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Configuration:
2 N-Channel (Dual), Schottky
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 15V, 2650pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-PowerPair® (6x5)
Packaging:
Tape & Reel (TR)
Power - Max:
3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZF918
ECCN:
EAR99
