FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
Die
Rds On (Max) @ Id, Vgs:
9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
title:
SQUN702E-T1_GE3
Vgs(th) (Max) @ Id:
2.5V @ 250µA, 3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C:
30A (Tc), 20A (Tc)
Configuration:
N and P-Channel, Common Drain
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
40V, 200V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
27 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Mounting Type:
Surface Mount, Wettable Flank
Grade:
Automotive
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Supplier Device Package:
Die
Packaging:
Tape & Reel (TR)
Power - Max:
48W (Tc), 60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQUN702
ECCN:
EAR99
