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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P35AFE,LF. The FET features of the product include logic level gate, 1.2v drive. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 100µa. The product has 150°c operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 1.4ohm @ 150ma, 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 250ma (ta). The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 42pf @ 10v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvii, is a highly preferred choice for users. es6 is the supplier device package value. The maximum power of the product is 150mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6p35, a base product number of the product. The product is designated with the ear99 code number.
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