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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8212-H(TE12LQ,M. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.173", 4.40mm width). It has a maximum Rds On and voltage of 21mohm @ 3a, 10v. The continuous current drain at 25°C is 6a. The product is available in 2 n-channel (dual) configuration. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 840pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 16nc @ 10v. 8-sop (5.5x6.0) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 450mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc8212, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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