Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
5mm
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
PowerPak SO-8L Dual
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V
Channel Type:
N, P
Length:
5.99mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
34 W, 34 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
30 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
edacadModel:
SQJ504EP-T1_GE3 Models
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
edacadModelUrl:
/en/models/8572047
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 25V, 4600pF @ 25V
Qualification:
AEC-Q101
standardLeadTime:
57 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8 Dual
Power - Max:
34W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ504
ECCN:
EAR99
