Vishay Siliconix SI1917EDH-T1-E3

SI1917EDH-T1-E3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
SI1917
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 1A 570mW Surface Mount SC-70-6 (SOT-363)
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
450mV @ 100µA (Min)
Series:
TrenchFET®
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
370mOhm @ 1A, 4.5V
Supplier Device Package:
SC-70-6 (SOT-363)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
570mW
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
1A
Manufacturer:
Vishay Siliconix
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI1917EDH-T1-E3. The FET features of the product include logic level gate. Base Part Number: si1917. It features mosfet array 2 p-channel (dual) 12v 1a 570mw surface mount sc-70-6 (sot-363). The maximum gate charge and given voltages include 2nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 450mv @ 100µa (min). The product trenchfet®, is a highly preferred choice for users. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 370mohm @ 1a, 4.5v. sc-70-6 (sot-363) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 570mw. The product has a 12v drain to source voltage. The continuous current drain at 25°C is 1a. The vishay siliconix's product offers user-desired applications.

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PCN- SIL-0582013 05/Dec/2013(PCN Obsolescence/ EOL)
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SI1917EDH(Datasheets)

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FAQs

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