Category:
Small Signal
Dimensions:
4.9 x 3.91 x 1.58mm
Maximum Continuous Drain Current:
1.17 A
Transistor Material:
Si
Width:
3.91mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
15 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+125 °C
Typical Gate Charge @ Vgs:
5.45 nC @ 10 V
Channel Type:
P
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
13 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
840 mW
Maximum Gate Source Voltage:
-15 V, +2 V
Height:
1.58mm
Typical Turn-On Delay Time:
4.5 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
400 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
5.45nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
TPS1120D Models
Current - Continuous Drain (Id) @ 25°C:
1.17A
edacadModelUrl:
/en/models/372164
Configuration:
2 P-Channel (Dual)
Package:
Tube
Drain to Source Voltage (Vdss):
15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
840mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPS1120
ECCN:
EAR99
