Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 4.5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
STripFET
Maximum Gate Source Voltage:
-15 V, +15 V
Height:
1.25mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
55 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
55mOhm @ 2A, 10V
title:
STS4DNF60L
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STS4DNF60L Models
Current - Continuous Drain (Id) @ 25°C:
4A
edacadModelUrl:
/en/models/654583
Configuration:
2 N-Channel (Dual)
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1030pF @ 25V
Mounting Type:
Surface Mount
Series:
STripFET™
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 4.5V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS4DNF60
ECCN:
EAR99
