Microsemi Corporation APTSM120AM25CT3AG

Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 4mA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
SP3
Rds On (Max) @ Id, Vgs:
25mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs:
544nC @ 20V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
148A (Tc)
Configuration:
2 N-Channel (Dual), Schottky
Package:
Bulk
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
10200pF @ 1000V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
SP3
Power - Max:
937W
Technology:
Silicon Carbide (SiC)
Base Product Number:
APTSM120
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTSM120AM25CT3AG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 4ma. The product has -40°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sp3. It has a maximum Rds On and voltage of 25mohm @ 80a, 20v. The maximum gate charge and given voltages include 544nc @ 20v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 148a (tc). The product is available in 2 n-channel (dual), schottky configuration. It is shipped in bulk package . The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 10200pf @ 1000v. The product is available in chassis mount configuration. sp3 is the supplier device package value. The maximum power of the product is 937w. This product use silicon carbide (sic) technology. Moreover, it corresponds to aptsm120, a base product number of the product. The product is designated with the ear99 code number.

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Microchip CA Prop65(Environmental Information)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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