Vishay General Semiconductor - Diodes Division MBR10H100-E3/4W

MBR10H100-E3-4W Vishay General Semiconductor - Diodes Division MBR10H100-E3/4W
Vishay General Semiconductor - Diodes Division

Product Information

HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-220-2
Operating Temperature - Junction:
-65°C ~ 175°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
770 mV @ 10 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
100 V
Capacitance @ Vr, F:
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
4.5 µA @ 100 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AC
Technology:
Schottky
Base Product Number:
MBR10
ECCN:
EAR99
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This is manufactured by Vishay General Semiconductor - Diodes Division. The manufacturer part number is MBR10H100-E3/4W. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in to-220-2. The product operate at temperatures ranging from -65°c ~ 175°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). It features a 10a of average rectified current. The product has a maximum forward voltage of 770 mv @ 10 a. It is shipped in tube package . While it has maximum reverse voltage of 100 v. Its typical moisture sensitivity level is 1 (unlimited). 4.5 µa @ 100 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-220ac is the supplier device package value. This product use schottky technology. Moreover, it corresponds to mbr10, a base product number of the product. The product is designated with the ear99 code number.

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MBR(F,B)10Hxx(Datasheets)

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