Deliver to
United Kingdom
Enjoy 10% savings with code 'SAVE10' when you spend £50 or more! Available online only—enter the code at checkout!
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS10E65F,S1Q(S. It features diode silicon carbide schottky 650v 10a (dc) through hole to-220-2l. 50µa @ 650v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 175°c (max). The product is available in through hole configuration. While it has maximum reverse voltage of 650v. Moreover, the product has a 36pf @ 650v, 1mhz capacitance. The product has a maximum forward voltage of 1.6v @ 10a. to-220-2l is the supplier device package value. It has a trr (reverse recovery time) of 0ns. It features a 10a (dc) of average rectified current. Moreover, the product comes in to-220-2. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). The toshiba semiconductor and storage's product offers user-desired applications.
Basket Total:
£ 0