Toshiba Semiconductor and Storage BAS316,H3F

BAS316-H3F Toshiba Semiconductor and Storage BAS316,H3F
Toshiba Semiconductor and Storage

Product Information

Reverse Recovery Time (trr):
3 ns
HTSUS:
8541.10.0070
RoHS Status:
ROHS3 Compliant
Package / Case:
SC-76, SOD-323
Operating Temperature - Junction:
150°C (Max)
title:
BAS316,H3F
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
edacadModel:
BAS316,H3F Models
edacadModelUrl:
/en/models/7669709
Current - Average Rectified (Io):
250mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max):
100 V
Capacitance @ Vr, F:
0.35pF @ 0V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Current - Reverse Leakage @ Vr:
200 nA @ 80 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
USC
Packaging:
Tape & Reel (TR)
Technology:
Standard
Base Product Number:
BAS316
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is BAS316,H3F. It has a trr (reverse recovery time) of 3 ns. It is assigned with possible HTSUS value of 8541.10.0070. The product is rohs3 compliant. Moreover, the product comes in sc-76, sod-323. The product operate at temperatures ranging from 150°c (max). It has a robust speed of fast recovery =< 500ns, > 200ma (io). It features a 250ma of average rectified current. The product has a maximum forward voltage of 1.25 v @ 150 ma. While it has maximum reverse voltage of 100 v. Moreover, the product has a 0.35pf @ 0v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. 200 na @ 80 v is the reverse leakage value of a bespoke product. The product is available in surface mount configuration. usc is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. This product use standard technology. Moreover, it corresponds to bas316, a base product number of the product. The product is designated with the ear99 code number.

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