ON Semiconductor ISL9R18120S3ST

ISL9R18120S3ST ON Semiconductor
ISL9R18120S3ST
ISL9R18120S3ST
ON Semiconductor

Product Information

Mounting Type:
Surface Mount
Peak Reverse Recovery Time:
400ns
Peak Non-Repetitive Forward Surge Current:
200A
Maximum Forward Voltage Drop:
3.3V
Maximum Continuous Forward Current:
18A
Diode Technology:
Silicon Junction
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Diode Type:
Silicon Junction
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
1200V
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
ISL9
Detailed Description:
Diode Standard 1200V 18A Surface Mount TO-263AB
Reverse Recovery Time (trr):
300ns
Current - Reverse Leakage @ Vr:
100µA @ 1200V
Operating Temperature - Junction:
-55°C ~ 175°C
Mounting Type:
Surface Mount
Series:
Stealth™
Voltage - Forward (Vf) (Max) @ If:
3.3V @ 18A
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
18A
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
1200V
Diode Type:
Standard
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is ISL9R18120S3ST. The product is available in surface mount configuration. Moreover, it has a peak reverse recovery time about 400ns . Moreover, a bespoke product has 200a peak non-repetitive forward surge current. It features 3.3v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 18a. The product utilizes silicon junction diode technology. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It is designed with a silicon junction diode. The diode features a single configuration. It contains 3 pins. While having the peak reverse repetitive 1200v. It has typical 15 weeks of manufacturer standard lead time. Base Part Number: isl9. It features diode standard 1200v 18a surface mount to-263ab. It has a trr (reverse recovery time) of 300ns. 100µa @ 1200v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -55°c ~ 175°c. The product stealth™, is a highly preferred choice for users. The product has a maximum forward voltage of 3.3v @ 18a. to-263ab is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 18a of average rectified current. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. While it has maximum reverse voltage of 1200v. It is designed with a standard diode. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.

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ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S, 18A, 1200V, STEALTH Diode Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly/Material Chgs 15/Mar/2018(PCN Assembly/Origin)
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ISL9R18120G2/P2/S3S(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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