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Toshiba Semiconductor and Storage TRS8E65C,S1Q

TRS8E65C-S1Q Toshiba Semiconductor and Storage TRS8E65C,S1Q
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
TO-220-2
Operating Temperature - Junction:
175°C (Max)
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
650 V
Capacitance @ Vr, F:
44pF @ 650V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-2L
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
TRS8E65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS8E65C,S1Q. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in to-220-2. The product operate at temperatures ranging from 175°c (max). It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. It features a 8a of average rectified current. The product has a maximum forward voltage of 1.7 v @ 8 a. It is shipped in tube package . While it has maximum reverse voltage of 650 v. Moreover, the product has a 44pf @ 650v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). 90 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-220-2l is the supplier device package value. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to trs8e65, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)

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