Toshiba Semiconductor and Storage TRS10E65C,S1Q

TRS10E65C-S1Q Toshiba Semiconductor and Storage TRS10E65C,S1Q
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
TO-220-2
Operating Temperature - Junction:
175°C (Max)
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max):
650 V
Capacitance @ Vr, F:
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-2L
Packaging:
Tube
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
TRS10E65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS10E65C,S1Q. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in to-220-2. The product operate at temperatures ranging from 175°c (max). It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. It features a 10a of average rectified current. The product has a maximum forward voltage of 1.7 v @ 10 a. While it has maximum reverse voltage of 650 v. Its typical moisture sensitivity level is 1 (unlimited). 90 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-220-2l is the supplier device package value. In addition, tube is the available packaging type of the product. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to trs10e65, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)

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