GeneSiC Semiconductor GAP05SLT80-220

GAP05SLT80-220 GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0070
Package / Case:
Axial
Operating Temperature - Junction:
-55°C ~ 175°C
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Average Rectified (Io):
50mA
Voltage - Forward (Vf) (Max) @ If:
4.6 V @ 50 mA
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
8000 V
Capacitance @ Vr, F:
25pF @ 1V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
3.8 µA @ 8000 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
-
Technology:
SiC (Silicon Carbide) Schottky
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is GAP05SLT80-220. It is assigned with possible HTSUS value of 8541.10.0070. Moreover, the product comes in axial. The product operate at temperatures ranging from -55°c ~ 175°c. It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. It features a 50ma of average rectified current. The product has a maximum forward voltage of 4.6 v @ 50 ma. It is shipped in tube package . While it has maximum reverse voltage of 8000 v. Moreover, the product has a 25pf @ 1v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). 3.8 µa @ 8000 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. This product use sic (silicon carbide) schottky technology. The product is designated with the ear99 code number.

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GAP05SLT80-220(Datasheets)

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