Global Power Technology-GPT G5S12030BM

G5S12030BM Global Power Technology-GPT
Global Power Technology-GPT

Product Information

HTSUS:
8541.10.0080
Package / Case:
TO-247-3
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
-55°C ~ 175°C
REACH Status:
REACH info available upon request
Reverse Recovery Time (trr):
0 ns
Speed:
No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 15 A
Package:
Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io) (per Diode):
55A (DC)
Current - Reverse Leakage @ Vr:
50 µA @ 1200 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247AB
Technology:
SiC (Silicon Carbide) Schottky
ECCN:
EAR99
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This is manufactured by Global Power Technology-GPT. The manufacturer part number is G5S12030BM. It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in to-247-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from -55°c ~ 175°c. In addition, it is reach info available upon request. It has a trr (reverse recovery time) of 0 ns. It has a robust speed of no recovery time > 500ma (io). The product has a maximum forward voltage of 1.7 v @ 15 a. It is shipped in cut tape (ct) package . While it has maximum reverse voltage of 1200 v. The average rectified current at per diode is 55a (dc). 50 µa @ 1200 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-247ab is the supplier device package value. This product use sic (silicon carbide) schottky technology. The product is designated with the ear99 code number.

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G5S12030BM(Datasheets)

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