onsemi 600V 30A, Dual Silicon Junction Diode, 3-Pin TO-247 RHRG3060CC

RHRG3060CC onsemi 600V 30A, Dual Silicon Junction Diode, 3-Pin TO-247
onsemi

Product Information

Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
45ns
Peak Non-Repetitive Forward Surge Current:
325A
Maximum Forward Voltage Drop:
2.1V
Maximum Continuous Forward Current:
30A
Rectifier Type:
Switching
Package Type:
TO-247
Number of Elements per Chip:
2
Diode Type:
Silicon Junction
Diode Configuration:
Common Cathode
Pin Count:
3
Peak Reverse Repetitive Voltage:
600V
Reverse Recovery Time (trr):
45 ns
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-247-3
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
-65°C ~ 175°C
REACH Status:
REACH Unaffected
edacadModel:
RHRG3060CC Models
edacadModelUrl:
/en/models/1057768
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
onsemi
Voltage - Forward (Vf) (Max) @ If:
2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max):
600 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
30A
Current - Reverse Leakage @ Vr:
250 µA @ 600 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Packaging:
Tube
Technology:
Avalanche
Base Product Number:
RHRG3060
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is 600V 30A Dual Silicon Junction Diode 3-Pin TO-247 manufactured by onsemi. The manufacturer part number is RHRG3060CC. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 45ns . Moreover, a bespoke product has 325a peak non-repetitive forward surge current. It features 2.1v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 30a. This switching product is highly suited for various professionals in various settings. The package is a sort of to-247. It consists of 2 elements per chip. It is designed with a silicon junction diode. The diode features a common cathode configuration. It contains 3 pins. While having the peak reverse repetitive 600v. It has a trr (reverse recovery time) of 45 ns. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in to-247-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from -65°c ~ 175°c. In addition, it is reach unaffected. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The onsemi's product offers user-desired applications. The product has a maximum forward voltage of 2.1 v @ 30 a. While it has maximum reverse voltage of 600 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 30a. 250 µa @ 600 v is the reverse leakage value of a bespoke product. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. This product use avalanche technology. Moreover, it corresponds to rhrg3060, a base product number of the product. The product is designated with the ear99 code number.

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RHRG3040CC, RHRG3060CC, 60A, 400V to 600V, Hyperfast Dual Diode(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Wafer Fab Change 08/Oct/2020(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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RHRG3040CC, RHRG3060CC(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Packing quantity increase 28/Dec/2020(PCN Packaging)

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