Toshiba Semiconductor and Storage TRS16N65FB,S1F(S

TRS16N65FB-S1F-S Toshiba Semiconductor and Storage TRS16N65FB,S1F(S
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
TO-247-3
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
175°C (Max)
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
650 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
8A (DC)
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
TRS16N65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS16N65FB,S1F(S. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in to-247-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from 175°c (max). It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. The product has a maximum forward voltage of 1.7 v @ 8 a. It is shipped in tube package . While it has maximum reverse voltage of 650 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 8a (dc). 90 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-247 is the supplier device package value. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to trs16n65, a base product number of the product. The product is designated with the ear99 code number.

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