GeneSiC Semiconductor MBRTA80035R

MBRTA80035R GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0080
Package / Case:
Three Tower
Diode Configuration:
1 Pair Common Anode
Operating Temperature - Junction:
-55°C ~ 150°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
720 mV @ 400 A
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
35 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
1 mA @ 35 V
Current - Average Rectified (Io) (per Diode):
400A
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Three Tower
Technology:
Schottky
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is MBRTA80035R. It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in three tower. The diode features a 1 pair common anode configuration. The product operate at temperatures ranging from -55°c ~ 150°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 720 mv @ 400 a. It is shipped in bulk package . While it has maximum reverse voltage of 35 v. Its typical moisture sensitivity level is 1 (unlimited). 1 ma @ 35 v is the reverse leakage value of a bespoke product. The average rectified current at per diode is 400a. The product is available in chassis mount configuration. three tower is the supplier device package value. This product use schottky technology. The product is designated with the ear99 code number.

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