GeneSiC Semiconductor MBRTA60035R

MBRTA60035R GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0080
Package / Case:
Three Tower
Diode Configuration:
1 Pair Common Anode
Operating Temperature - Junction:
-55°C ~ 150°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
700 mV @ 300 A
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
35 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
1 mA @ 35 V
Current - Average Rectified (Io) (per Diode):
300A
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Three Tower
Technology:
Schottky
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is MBRTA60035R. It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in three tower. The diode features a 1 pair common anode configuration. The product operate at temperatures ranging from -55°c ~ 150°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 700 mv @ 300 a. It is shipped in bulk package . While it has maximum reverse voltage of 35 v. Its typical moisture sensitivity level is 1 (unlimited). 1 ma @ 35 v is the reverse leakage value of a bespoke product. The average rectified current at per diode is 300a. The product is available in chassis mount configuration. three tower is the supplier device package value. This product use schottky technology. The product is designated with the ear99 code number.

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