Toshiba Semiconductor and Storage BAV70,LM

BAV70-LM Toshiba Semiconductor and Storage BAV70,LM
Toshiba Semiconductor and Storage

Product Information

Reverse Recovery Time (trr):
4 ns
HTSUS:
8541.10.0070
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-236-3, SC-59, SOT-23-3
Diode Configuration:
1 Pair Common Cathode
edacadModel:
BAV70,LM Models
Operating Temperature - Junction:
150°C (Max)
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
edacadModelUrl:
/en/models/7669712
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Package:
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
215mA
standardLeadTime:
16 Weeks
Current - Reverse Leakage @ Vr:
200 nA @ 80 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Technology:
Standard
Base Product Number:
BAV70
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is BAV70,LM. It has a trr (reverse recovery time) of 4 ns. It is assigned with possible HTSUS value of 8541.10.0070. The product is rohs3 compliant. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from 150°c (max). It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 1.25 v @ 150 ma. It is shipped in tape & reel (tr) package . While it has maximum reverse voltage of 100 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 215ma. It has a long 16 weeks standard lead time. 200 na @ 80 v is the reverse leakage value of a bespoke product. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. This product use standard technology. Moreover, it corresponds to bav70, a base product number of the product. The product is designated with the ear99 code number.

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