Toshiba Semiconductor and Storage 30JL2C41(F)

30JL2C41-F- Toshiba Semiconductor and Storage 30JL2C41(F)
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
Package / Case:
TO-3P-3, SC-65-3
Diode Configuration:
1 Pair Common Cathode
Reverse Recovery Time (trr):
50 ns
Operating Temperature - Junction:
-40°C ~ 150°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
edacadModel:
30JL2C41(F) Models
edacadModelUrl:
/en/models/2062736
Manufacturer:
Toshiba Semiconductor and Storage
Voltage - Forward (Vf) (Max) @ If:
2 V @ 15 A
Voltage - DC Reverse (Vr) (Max):
600 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
15A
Current - Reverse Leakage @ Vr:
50 µA @ 600 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Packaging:
Bulk
Technology:
Standard
Base Product Number:
30JL2C
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 30JL2C41(F). It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in to-3p-3, sc-65-3. The diode features a 1 pair common cathode configuration. It has a trr (reverse recovery time) of 50 ns. The product operate at temperatures ranging from -40°c ~ 150°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The toshiba semiconductor and storage's product offers user-desired applications. The product has a maximum forward voltage of 2 v @ 15 a. While it has maximum reverse voltage of 600 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 15a. 50 µa @ 600 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-3p(n) is the supplier device package value. In addition, bulk is the available packaging type of the product. This product use standard technology. Moreover, it corresponds to 30jl2c, a base product number of the product. The product is designated with the ear99 code number.

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