Toshiba Semiconductor and Storage TRS12N65D,S1F

TRS12N65D-S1F Toshiba Semiconductor and Storage TRS12N65D,S1F
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
TO-247-3
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
175°C (Max)
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
Toshiba Semiconductor and Storage
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max):
650 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
6A (DC)
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Packaging:
Tube
Technology:
Schottky
Base Product Number:
TRS12N
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS12N65D,S1F. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in to-247-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from 175°c (max). It has a robust speed of fast recovery =< 500ns, > 200ma (io). The toshiba semiconductor and storage's product offers user-desired applications. The product has a maximum forward voltage of 1.7 v @ 6 a. While it has maximum reverse voltage of 650 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 6a (dc). 90 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. This product use schottky technology. Moreover, it corresponds to trs12n, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)

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