Vishay Semiconductor Diodes Division MBR10100CT-M3/4W

MBR10100CT-M3-4W Vishay Semiconductor Diodes Division MBR10100CT-M3/4W
MBR10100CT-M3/4W
Vishay Semiconductor Diodes Division

Product Information

Manufacturer Standard Lead Time:
23 Weeks
Base Part Number:
MBR10
Detailed Description:
Diode Array 1 Pair Common Cathode Schottky 100V 5A Through Hole TO-220-3
Current - Reverse Leakage @ Vr:
100µA @ 100V
Operating Temperature - Junction:
-65°C ~ 150°C
Mounting Type:
Through Hole
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward (Vf) (Max) @ If:
850mV @ 5A
Supplier Device Package:
TO-220AB
Packaging:
Tube
Current - Average Rectified (Io) (per Diode):
5A
Customer Reference:
Package / Case:
TO-220-3
Voltage - DC Reverse (Vr) (Max):
100V
Diode Type:
Schottky
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
Vishay Semiconductor Diodes Division
Checking for live stock

This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is MBR10100CT-M3/4W. It has typical 23 weeks of manufacturer standard lead time. Base Part Number: mbr10. It features diode array 1 pair common cathode schottky 100v 5a through hole to-220-3. 100µa @ 100v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -65°c ~ 150°c. The product is available in through hole configuration. The diode features a 1 pair common cathode configuration. The product has a maximum forward voltage of 850mv @ 5a. to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The average rectified current at per diode is 5a. Moreover, the product comes in to-220-3. While it has maximum reverse voltage of 100v. It is designed with a schottky diode. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The vishay semiconductor diodes division's product offers user-desired applications.

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TO-220/TO-262 Wire Bond 11/Jan/2017(PCN Assembly/Origin)
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MBR1090CT,MBR10100CT(Datasheets)

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