Toshiba Semiconductor and Storage TRS20N65D,S1F

TRS20N65D-S1F Toshiba Semiconductor and Storage TRS20N65D,S1F
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
TO-247-3
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
175°C (Max)
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
650 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
10A (DC)
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Technology:
Schottky
Base Product Number:
TRS20N
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS20N65D,S1F. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in to-247-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from 175°c (max). It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 1.7 v @ 10 a. It is shipped in tube package . While it has maximum reverse voltage of 650 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 10a (dc). 90 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-247 is the supplier device package value. This product use schottky technology. Moreover, it corresponds to trs20n, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)

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