ON Semiconductor BYW51-200G

BYW51-200G ON Semiconductor
BYW51-200G
BYW51-200G
ON Semiconductor

Product Information

Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
35ns
Peak Non-Repetitive Forward Surge Current:
100A
Maximum Forward Voltage Drop:
970mV
Maximum Continuous Forward Current:
16A
Rectifier Type:
Switching
Package Type:
TO-220AB
Number of Elements per Chip:
2
Diode Type:
Silicon Junction
Diode Configuration:
Common Cathode
Pin Count:
3
Peak Reverse Repetitive Voltage:
200V
Manufacturer Standard Lead Time:
17 Weeks
Base Part Number:
BYW51
Detailed Description:
Diode Array Standard 200V 8A Through Hole TO-220-3
Reverse Recovery Time (trr):
35ns
Current - Reverse Leakage @ Vr:
10µA @ 200V
Operating Temperature - Junction:
Mounting Type:
Through Hole
Series:
SWITCHMODE™
Voltage - Forward (Vf) (Max) @ If:
970mV @ 8A
Supplier Device Package:
TO-220AB
Packaging:
Tube
Current - Average Rectified (Io) (per Diode):
8A
Diode Configuration:
Customer Reference:
Package / Case:
TO-220-3
Voltage - DC Reverse (Vr) (Max):
200V
Diode Type:
Standard
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is BYW51-200G. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 35ns . Moreover, a bespoke product has 100a peak non-repetitive forward surge current. It features 970mv of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 16a. This switching product is highly suited for various professionals in various settings. The package is a sort of to-220ab. It consists of 2 elements per chip. It is designed with a silicon junction diode. The diode features a common cathode configuration. It contains 3 pins. While having the peak reverse repetitive 200v. It has typical 17 weeks of manufacturer standard lead time. Base Part Number: byw51. It features diode array standard 200v 8a through hole to-220-3. It has a trr (reverse recovery time) of 35ns. 10µa @ 200v is the reverse leakage value of a bespoke product. The product switchmode™, is a highly preferred choice for users. The product has a maximum forward voltage of 970mv @ 8a. to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The average rectified current at per diode is 8a. Moreover, the product comes in to-220-3. While it has maximum reverse voltage of 200v. It is designed with a standard diode. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev 14/May/2020(PCN Assembly/Origin)
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BYW51-200(Datasheets)
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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)

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FAQs

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Yes. We ship BYW51-200G Internationally to many countries around the world.