GeneSiC Semiconductor MURT20010R

MURT20010R GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
Three Tower
Diode Configuration:
1 Pair Common Anode
Operating Temperature - Junction:
-55°C ~ 150°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 100 A
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
100A
standardLeadTime:
7 Weeks
Current - Reverse Leakage @ Vr:
25 µA @ 50 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Three Tower
Technology:
Standard
Base Product Number:
MURT20010
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is MURT20010R. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in three tower. The diode features a 1 pair common anode configuration. The product operate at temperatures ranging from -55°c ~ 150°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). It has a trr (reverse recovery time) of 75 ns. The product has a maximum forward voltage of 1.3 v @ 100 a. It is shipped in bulk package . While it has maximum reverse voltage of 100 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 100a. It has a long 7 weeks standard lead time. 25 µa @ 50 v is the reverse leakage value of a bespoke product. The product is available in chassis mount configuration. three tower is the supplier device package value. This product use standard technology. Moreover, it corresponds to murt20010, a base product number of the product. The product is designated with the ear99 code number.

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MURT20005 thru MURT20020R(Datasheets)

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