GeneSiC Semiconductor MBR600100CT

MBR600100CT GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
Twin Tower
Diode Configuration:
1 Pair Common Cathode
edacadModel:
MBR600100CT Models
Operating Temperature - Junction:
-55°C ~ 150°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
edacadModelUrl:
/en/models/3928204
Voltage - Forward (Vf) (Max) @ If:
880 mV @ 300 A
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
300A
standardLeadTime:
7 Weeks
Current - Reverse Leakage @ Vr:
1 mA @ 20 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Twin Tower
Technology:
Schottky
Base Product Number:
MBR600100
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is MBR600100CT. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in twin tower. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from -55°c ~ 150°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 880 mv @ 300 a. It is shipped in bulk package . While it has maximum reverse voltage of 100 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 300a. It has a long 7 weeks standard lead time. 1 ma @ 20 v is the reverse leakage value of a bespoke product. The product is available in chassis mount configuration. twin tower is the supplier device package value. This product use schottky technology. Moreover, it corresponds to mbr600100, a base product number of the product. The product is designated with the ear99 code number.

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MBR60045CT thru MBR600100CTR(Datasheets)

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