GeneSiC Semiconductor MBR60035CTR

MBR60035CTR GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
Twin Tower
Diode Configuration:
1 Pair Common Anode
edacadModel:
MBR60035CTR Models
Operating Temperature - Junction:
-55°C ~ 150°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
edacadModelUrl:
/en/models/3928211
Voltage - Forward (Vf) (Max) @ If:
750 mV @ 300 A
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
35 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
300A
standardLeadTime:
7 Weeks
Current - Reverse Leakage @ Vr:
1 mA @ 20 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Twin Tower
Technology:
Schottky
Base Product Number:
MBR60035
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is MBR60035CTR. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in twin tower. The diode features a 1 pair common anode configuration. The product operate at temperatures ranging from -55°c ~ 150°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 750 mv @ 300 a. It is shipped in bulk package . While it has maximum reverse voltage of 35 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 300a. It has a long 7 weeks standard lead time. 1 ma @ 20 v is the reverse leakage value of a bespoke product. The product is available in chassis mount configuration. twin tower is the supplier device package value. This product use schottky technology. Moreover, it corresponds to mbr60035, a base product number of the product. The product is designated with the ear99 code number.

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MBR60020CT thru MBR60040CTR(Datasheets)

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