GeneSiC Semiconductor MURT40010

MURT40010 GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
Three Tower
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
-55°C ~ 150°C
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
125 ns
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 200 A
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
200A
standardLeadTime:
7 Weeks
Current - Reverse Leakage @ Vr:
25 µA @ 50 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Three Tower
Technology:
Standard
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is MURT40010. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in three tower. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from -55°c ~ 150°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). It has a trr (reverse recovery time) of 125 ns. The product has a maximum forward voltage of 1.3 v @ 200 a. It is shipped in bulk package . While it has maximum reverse voltage of 100 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 200a. It has a long 7 weeks standard lead time. 25 µa @ 50 v is the reverse leakage value of a bespoke product. The product is available in chassis mount configuration. three tower is the supplier device package value. This product use standard technology. The product is designated with the ear99 code number.

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MURT40005 thru MURT40020R(Datasheets)

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