GeneSiC Semiconductor GD2X10MPS12D

GD2X10MPS12D GeneSiC Semiconductor
GD2X10MPS12D
GeneSiC Semiconductor

Product Information

HTSUS:
8541.10.0080
Package / Case:
TO-247-3
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
-55°C ~ 175°C
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Manufacturer:
GeneSiC Semiconductor
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io) (per Diode):
25A
standardLeadTime:
18 Weeks
Current - Reverse Leakage @ Vr:
5 µA @ 1200 V
Mounting Type:
Through Hole
Series:
MPS™
Supplier Device Package:
TO-247-3
Packaging:
Tube
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
GD2X
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is GD2X10MPS12D. It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in to-247-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from -55°c ~ 175°c. It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. The genesic semiconductor's product offers user-desired applications. The product has a maximum forward voltage of 1.8 v @ 10 a. While it has maximum reverse voltage of 1200 v. The average rectified current at per diode is 25a. It has a long 18 weeks standard lead time. 5 µa @ 1200 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. The product mps™, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to gd2x, a base product number of the product. The product is designated with the ear99 code number.

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GD2X10MPS12D(Datasheets)

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