Toshiba Semiconductor and Storage TRS20N65FB,S1Q

TRS20N65FB-S1Q Toshiba Semiconductor and Storage TRS20N65FB,S1Q
Toshiba Semiconductor and Storage

Product Information

Reverse Recovery Time (trr):
0 ns
HTSUS:
8541.10.0080
Package / Case:
TO-247-3
Diode Configuration:
1 Pair Common Cathode
edacadModel:
TRS20N65FB,S1Q Models
Operating Temperature - Junction:
175°C
Speed:
No Recovery Time > 500mA (Io)
edacadModelUrl:
/en/models/13158526
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 10 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
650 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
10A (DC)
standardLeadTime:
32 Weeks
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
TRS20N65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS20N65FB,S1Q. It has a trr (reverse recovery time) of 0 ns. It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in to-247-3. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from 175°c. It has a robust speed of no recovery time > 500ma (io). The product has a maximum forward voltage of 1.6 v @ 10 a. It is shipped in tube package . While it has maximum reverse voltage of 650 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 10a (dc). It has a long 32 weeks standard lead time. 50 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-247 is the supplier device package value. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to trs20n65, a base product number of the product. The product is designated with the ear99 code number.

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