Toshiba Semiconductor and Storage HN2S03FE(TE85L,F)

HN2S03FE-TE85L-F- Toshiba Semiconductor and Storage HN2S03FE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0070
Package / Case:
SOT-563, SOT-666
Diode Configuration:
3 Independent
Operating Temperature - Junction:
125°C (Max)
Speed:
Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If:
550 mV @ 50 mA
Package:
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max):
20 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
50mA
Current - Reverse Leakage @ Vr:
500 nA @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Technology:
Schottky
Base Product Number:
HN2S03
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN2S03FE(TE85L,F). It is assigned with possible HTSUS value of 8541.10.0070. Moreover, the product comes in sot-563, sot-666. The diode features a 3 independent configuration. The product operate at temperatures ranging from 125°c (max). It has a robust speed of small signal =< 200ma (io), any speed. The product has a maximum forward voltage of 550 mv @ 50 ma. It is shipped in tape & reel (tr) package . While it has maximum reverse voltage of 20 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 50ma. 500 na @ 20 v is the reverse leakage value of a bespoke product. The product is available in surface mount configuration. es6 is the supplier device package value. This product use schottky technology. Moreover, it corresponds to hn2s03, a base product number of the product. The product is designated with the ear99 code number.

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HN2S03FE(Datasheets)

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