Toshiba, RN2111(F) PNP Digital Transistor, 100 mA 50 V Ratio Of 10 kΩ, 3-Pin ESM

RN2111-F- Toshiba, RN2111(F) PNP Digital Transistor, 100 mA 50 V Ratio Of 10 kΩ, 3-Pin ESM
Toshiba

Product Information

Minimum DC Current Gain:
120
Transistor Type:
PNP
Dimensions:
1.6 x 0.8 x 0.7mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Voltage:
50 V
Height:
0.7mm
Width:
0.8mm
Length:
1.6mm
Package Type:
ESM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.3 V
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
10 kΩ
RoHs Compliant
Checking for live stock

This is PNP Digital Transistor 100 mA 50 V Ratio Of 10 kΩ 3-Pin ESM manufactured by Toshiba. The manufacturer part number is RN2111(F). It features up to 120 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 1.6 x 0.8 x 0.7mm. The product is available in surface mount configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 100 ma continuous collector current . Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.7mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.6mm. The package is a sort of esm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 0.3 v collector emitter saturation voltage . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 10 kω input resistor .

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TRANSISTOR, DIGITAL, PNP, RN2111, PBFREE(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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