Toshiba, RN1907(TE85L,F), Dual NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 0.21, 1, 6-Pin US

RN1907-TE85L-F- Toshiba, RN1907(TE85L,F), Dual NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 0.21, 1, 6-Pin US
Toshiba

Product Information

Base-Emitter Resistor:
47kΩ
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.9mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
6 V
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Voltage:
50 V
Minimum DC Current Gain:
80
Height:
0.9mm
Width:
1.25mm
Length:
2mm
Package Type:
US
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.3 V
Typical Resistor Ratio:
0.21, 1
Transistor Configuration:
Isolated
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Typical Input Resistor:
10 kΩ
RoHs Compliant
Checking for live stock

This is Dual NPN Digital Transistor 100 mA 50 V 10 kΩ Ratio Of 0.21 1 6-Pin US manufactured by Toshiba. The manufacturer part number is RN1907(TE85L,F). It has about 47kω base-emitter resistor . The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.9mm. The product is available in surface mount configuration. It features a 6 v of maximum emitter base voltage. The product has a maximum 100 ma continuous collector current . Whereas features a 50 v of collector emitter voltage (max). It features up to 80 of minimum DC current gain. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. The package is a sort of us. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 0.3 v collector emitter saturation voltage . In addition, it has a typical 0.21, 1 resistor ratio . The product offers isolated transistor configuration. It has a maximum operating temperature of +150 °c. It contains 6 pins. Whereas, it has a typical 10 kω input resistor .

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NPN Digital Transistor Datasheet(Technical Reference)

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