ON Semiconductor EMD4DXV6T5G

EMD4DXV6T5G ON Semiconductor
EMD4DXV6T5G
EMD4DXV6T5G
ON Semiconductor

Product Information

Dimensions:
1.7 x 1.3 x 0.6mm
Maximum Collector Emitter Saturation Voltage:
0.25 V
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Continuous Collector Current:
100 mA
Package Type:
SOT-563
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Input Resistor:
10 kΩ
Transistor Type:
NPN + PNP
Maximum Emitter Base Voltage:
6 V
Length:
1.7mm
Pin Count:
6
Minimum DC Current Gain:
80
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Voltage:
50 V
Height:
0.6mm
Minimum Operating Temperature:
-55 °C
Typical Resistor Ratio:
0.21
Manufacturer Standard Lead Time:
2 Weeks
Current - Collector (Ic) (Max):
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms):
47k, 10k
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Standard Package:
8,000
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Resistor - Emitter Base (R2) (Ohms):
47k
Power - Max:
500mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-563, SOT-666
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is EMD4DXV6T5G. The given dimensions of the product include 1.7 x 1.3 x 0.6mm. The product has a maximum 0.25 v collector emitter saturation voltage . Furthermore, the product is 1.3mm wide. The product offers isolated transistor configuration. The product has a maximum 100 ma continuous collector current . The package is a sort of sot-563. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. Whereas, it has a typical 10 kω input resistor . The transistor is a npn + pnp type. It features a 6 v of maximum emitter base voltage. Its accurate length is 1.7mm. It contains 6 pins. It features up to 80 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. In addition, it has a typical 0.21 resistor ratio . It has typical 2 weeks of manufacturer standard lead time. The maximum collector current includes 100ma. Furthermore, 80 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. Features 47k, 10k base resistor. The 250mv @ 300µa, 10ma is the maximum Vce saturation. It is available in the standard package of 8,000. sot-563 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & reel (tr) is the available packaging type of the product. While the emitter base resistor (R2) is 47k. The maximum power of the product is 500mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in sot-563, sot-666. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Fab Site Addition 07/Apr/2015(PCN Assembly/Origin)
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Qualification Assembly/Test Site 25/Sep/2014(PCN Assembly/Origin)
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EMD4DXV6(Datasheets)
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Wire Bond 01/Dec/2010(PCN Design/Specification)

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