Minimum DC Current Gain:
2000
Transistor Type:
NPN
Dimensions:
6.5 x 3.5 x 1.57mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
1 A
Maximum Collector Base Voltage:
90 V
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
1.9 V
Height:
1.57mm
Width:
3.5mm
Length:
6.5mm
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1.3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 500mA, 10V
Frequency - Transition:
-
title:
BSP52T1G
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
1.3V @ 500µA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
10µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Packaging:
Tape & Reel (TR)
Power - Max:
800 mW
Base Product Number:
BSP52
ECCN:
EAR99
