Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.95mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Continuous Collector Current:
12 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
1 mA, 100 μA
Height:
15.95mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
12 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 5A, 3V
Frequency - Transition:
-
title:
BDW93CTU
REACH Status:
REACH Unaffected
edacadModel:
BDW93CTU Models
edacadModelUrl:
/en/models/976571
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
3V @ 100mA, 10A
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
80 W
Base Product Number:
BDW93
ECCN:
EAR99
