Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
21.08 (Dia.) x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Continuous Collector Current:
30 A
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
5 V
Height:
8.51mm
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204AA
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
30 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-204AA, TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 20A, 5V
Frequency - Transition:
4MHz
REACH Status:
REACH Unaffected
edacadModel:
MJ11012G Models
edacadModelUrl:
/en/models/1481709
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
4V @ 300mA, 30A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
11 Weeks
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-204 (TO-3)
Packaging:
Tray
Power - Max:
200 W
Base Product Number:
MJ11012
ECCN:
EAR99
